The Li and Ba atoms were intercalated into the van der Waals gaps of Bi2Te3, solid solutions based on Bi2Te3 and beta-polytype of InSe single crystals of nand p-types The temperature dependence of resistivity, the Hall effect and the Shubnikov- de Haas effect were investigated in host single crystals and after an intercalation. The intercalation of metallic atoms causes a change in carrier concentration and hence, the Fermi energy. The intercalated Bi2Te3 samples possess the same six-ellipsoidal Fermi surface as the host material 2D weak localization was observed in the host n-InSe which was suppressed by an intercalation