In this paper we present the results of the growth of GaxIn1-xAs epilayers using Ga-ln alloy sources by chloride vapor phase epitaxial technique. The amount of indium incorporated in the epilayers with alloy source composition ranging from 3 to 12 atomic percentage (at%) of Ga is studied. Double crystal X-ray diffractometry (DXRD) has been used to characterize the epitaxial layers.