Thin film perovskite-type oxide SrTiO3 has been grown epitaxially on Si(001) substrate by molecular beam epitaxy. Reflection high energy electron diffraction and x-ray diffraction analysis indicate high quality SrTiO3 heteroepitaxy on Si substrate with SrTiO3(001)//Si(001) and SrTiO3[010]//Si[110]. The SrTiO3 surface is atomically as smooth as the starting substrate surface, with a root mean square roughness of 1.2 Angstrom observed by atomic force microscopy. The thickness of the amorphous interfacial layer between SrTiO3 and Si has been engineered to minimize the device short channel effect. An effective oxide thickness <10 Angstrom has been obtained for a 110 Angstrom thick dielectric film. The interface state density between SrTiO3 and Si is S.4x 10(10) cm(-2) eV(-1), and the inversion layer carrier mobilities are 221 and 62 cm(2)V(-1) s(-1) for n- and p-channel metal-oxide-semiconductor devices with 1.2 mu m effective channel length, respectively. The gate leakage in these devices is two orders of magnitude smaller than a comparable SiO2 gate dielectric metal-oxide-semiconductor field effect transistors.