We report the first quantitative experimental two-dimensional (2D) dopant profile measurement of 0.35 mu m transistors with lightly doped drain structures and its comparison with theoretical simulation. Experimentally, the 2D dopant profile is determined using dopant-selective etching followed by atomic farce microscopy Imaging. These results show excellent quantitative agreement with recent theoretical profile simulation for both n- and p-channel metal-oxide-semiconductor transistors.