The use of advanced lithography to pattern self-assembled monolayers (SAMs) was investigated as a means to create surfaces with regions of different chemical functionality with dimensions of order 0.10 mu m. SAMs were prepared by the chemisorption of octadecyltrichlorosilane on silicon wafers, and exposed to synchrotron x-ray (0.814 nm) radiation or extreme ultraviolet (EUV, 13.4 nm) radiation. Exposure to x rays in the presence of oxygen resulted in the incorporation of hydroxy (C-OH) and aldehyde (CH=O) functional groups on the SAM surfaces. The extent of chemical modification was a function of exposure dose and air pressure. Patterned SAMs with various shapes at scales from 50 mu m to 0.15 mu m were obtained by exposing SAMs to x rays through a mask, or with interferometric EUV lithography. The SAM patterns were imaged directly by condensation figures and lateral force microscopy, and were imaged indirectly using atomic force microscopy and the topography of thin films of diblock copolymers. The contrast in the indirect method resulted from a difference in film thickness due to different wetting behavior of thin films of diblock copolymers on the patterned surfaces.