Journal of Vacuum Science & Technology B, Vol.17, No.6, 2883-2887, 1999
Finite element analysis of SCALPEL wafer heating
A high-throughput scattering with angular limitation projection electron beam lithography (SCALPEL) tool will typically deliver up to 1.5X10(-4) J to an area of 250 mu mX250 mu m over a time of 200 mu s, corresponding to a power input of 0.75 W. This heat deposition occurs in the upper 60 mu m of a wafer creating local thermal strain at the time of image formation, and depends on mask and tool conditions and specific boundary conditions. Initial modeling results indicate expansion-induced peak pattern placement errors of similar to 1 nm on a local scale (i.e., a 3 mm effective field size), several nanometers in a chip area, and a few microns overall. Since the use of a mainly predictive correction algorithm is anticipated, it is vital to conduct a rigorous investigation of the heat transfer and strain formation. Results are presented of such an analysis, illustrating the heating response for the fundamental building blocks of the SCALPEL writing strategy.
Keywords:LITHOGRAPHY