화학공학소재연구정보센터
Journal of Vacuum Science & Technology B, Vol.17, No.6, 2883-2887, 1999
Finite element analysis of SCALPEL wafer heating
A high-throughput scattering with angular limitation projection electron beam lithography (SCALPEL) tool will typically deliver up to 1.5X10(-4) J to an area of 250 mu mX250 mu m over a time of 200 mu s, corresponding to a power input of 0.75 W. This heat deposition occurs in the upper 60 mu m of a wafer creating local thermal strain at the time of image formation, and depends on mask and tool conditions and specific boundary conditions. Initial modeling results indicate expansion-induced peak pattern placement errors of similar to 1 nm on a local scale (i.e., a 3 mm effective field size), several nanometers in a chip area, and a few microns overall. Since the use of a mainly predictive correction algorithm is anticipated, it is vital to conduct a rigorous investigation of the heat transfer and strain formation. Results are presented of such an analysis, illustrating the heating response for the fundamental building blocks of the SCALPEL writing strategy.