The results of a rapid thermal oxide (RTO) growth study involving 200 mm Si wafers oxidized in three different oxidation ambients (O-2, N2O, and NO) at two different pressures (100 and 700 Torr), and a wide range of oxidation temperatures (950-1200 degrees C) and times (0-480 s) are presented in this work. The variable power law is shown to provide an excellent fit to the characteristics. Enhancement in the O-2 RTO over furnace oxidation (FO growth rates, continued growth in N2O RTO, and growth saturation in NO RTO were observed. Anomalies including higher growth rates at a lower pressure in N2O, higher growth rates at lower temperatures and at a lower pressure in NO, as well as higher growth rates in N2O and NO than in O-2 were observed. They map be attributable to the competition between the N incorporation rate and the oxide growth rate for predominance, which might in turn be dependent on the temperature. pressure. thickness of and defect density in the initial oxide layer and the amount of N already incorporated. The growth kinetics exhibit Arrhenius relationships. Those for O-2 RTO, O-2 FO, and low pressure N2O RTO are similar while those for N2O RTO, N2O FO, and NO RTO are different. Our results suggest the oxide thickness range within which the oxidation is reaction limited decreases in the order of O-2 RTO, N2O RTO, and NO RTO.