Field emission arrays using Si semiconductor emitters have been developed using different technologies and configurations, including the field emission microtriode (FEMT). Previously reported modeling results for FEMT structures considered metallic tips and, accordingly, used the Fowler-Nordheim (FN) current density-electric field J(E) relationship. In this article, modified J(Si)(E) equations for Si semiconductor emitters are used. The FEMT model takes;into account a volcano-shaped gate with an: emitter protruding through the gate opening. The electric field distribution in the device is numerically computed solving the two-dimensional Laplace equation for the electrical potential using a lattice with a varying grid size. The field emission current is obtained through integration of J(Si)(E) over the emitter surface. No field enhancement and area factors are used. The FEMT field emission: current is computed as function of the device parameters, and is compared to "standard":results derived using the FN J(E) relationship. Similar modeling trends are obtained for; the cases of FEMTs with metal and Si emitters.