SiO2 films were deposited on Si-Ge using a low temperature (300 degrees C) remote plasma-assisted chemical vapor deposition (RPCVD) process. A novel feature of this process is that it does not require a preoxidation step prior to deposition. The electrical properties of the resulting oxide films were analyzed, indicating good interfacial (D-it similar to 3 x 10(11) cm(-2) eV(-1)) and excellent breakdown properties (E-bd similar to 10 MV/cm). Electron trapping was determined to be the dominant charge trapping mechanism. Interfacial properties and oxide reliability were seen to improve upon annealing at moderately high (550-650 degrees C) temperatures.