Ohmic majority and minority drift mobilities are calculated for holes in unstrained and strained SiGe up to Ge contents of 30% and doping concentrations of 10(20) cm(-3). The transport model is based on three analytical hole bands and is therefore suitable for Monte Carlo simulations of npn heterojunction bipolar transistors with position-dependent Ge profiles. The band parameters have been adjusted to full band structure data obtained by the nonlocal empirical pseudopotential method including spin-orbit interaction. In strained Sice the theoretical in-plane mobility component is compared to literature data and new experimental measurements. The theoretical results indicate an appreciable increase of the mobility for the highest Ge concentrations. In addition, the effective valence-band densities of states are computed.