Electron transport properties in beta-SiC quantized inversion layers have been studied and the results of electron mobility calculations at room and higher temperatures have been reported. To do so, we have developed a Monte Carlo simulator used in conjunction with the self-consistent solution of the Poisson and Schrodinger equations. We show that for a fixed inversion-charge concentration, beta-SiC inversion-layer electrons spread less into the bulk than Si ones as a consequence of the effective mass values. Therefore, the defects of the SiO2/beta-SiC (interface roughness, charged centers) will strongly affect electron transport.properties.