We report results on the incorporation of Bi (n type) and Tl (p-type) impurity in PbSe and PbEuSe grown on CaF2/Si(111) by molecular beam epitaxy. Bi2Se3, and Tl2Se were used as sources of dopants in the growth. Electron concentrations in the low 10(19) cm(-3) range and hole concentrations in the middle 10(18) cm(-3) range have been realized in the PbSe and PbEuSe layers with Eu content up to 3%. Electron and hole mobilities are comparable to those for PbSe and PbEuSe grown on BaF2.