We have performed selective area epitaxy of CdTe by using a bimetal shadow mask during molecular beam epitaxial growth on CdTe (211)B substrate and achieved patterns of square arrays similar to those used in the detector arrays. The growths were carried out at 285 and 190 OC. We observed reproducible excellent pattern definition for both conditions. The sidewalls are abrupt (similar to 5-7 mu m when grown without sample rotation and similar to 7-9 mu m when grown with sample rotation), the mesa tops are flat and the separations are well defined. All the squares in a given array are uniform. Similar results were also obtained by using a mask fixture that allowed us to place the mask on the substrate within the growth chamber (in situ). This technique may be applicable for the in situ fabrication of HgCdTe focal plane arrays.