3C-SiC films have been grown by molecular beam epitaxy on Si(lll) substrates using a single organosilane precursor (silacyclobutane-SiC3H8) Temperatures of 800 to 1100 degrees C and pressures of (1-5)x10(-6) Torr were utilized. The growth rate of the SiC films obtained from secondary ion mass spectrometry depth profiles ranged from 1 to 6 Angstrom/min. The SiC chemical bonding.structure was confirmed by Fourier transform infrared spectrometry. The surface morphology and crystallinity of SiC films were studied by scanning electron microscopy (SEM), reflection high energy electron diffraction and x-ray diffraction. Typical triangular growth pits of various sizes were observed by SEM. X-ray diffraction reveals that SIC films grown in the presence of native oxide exhibit better crystallinity than those grown on surfaces from which the oxide is removed prior to growth.