GaN field emission pyramids are grown by self-limiting, selective-area metalorganic chemical vapor deposition. The self-limitation provides the potential of high uniformity of the pyramids and the selective-area growth allows one to define regular arrays of GaN pyramids for field emitter arrays (FEAs). Fabrication of an integrated anode lowered the operating voltage of the FEAs by narrowing the anode-cathode distance compared to devices with an external anode. A maximum emission current of 0.15 mu A/tip has been observed for voltages of 570 V with an emitter-anode separation of 2 mu m.