Twenty GaAs/Al0.3Ga0.7As tilted T-shaped quantum wires (T-QWRs) on a (111)B facet were uniformly fabricated with a two-step growth of molecular beam epitaxy (MBE), which consists of a glancing-angle MBE of GaAs/Al0.3Ga0.7As multi-quantum well layer with 20 GaAs wells (a well width of L-w=6.1 nm) on reverse-mesa stripes on a (001) GaAs substrate and MBE overgrowth of a GaAs/Al0.3Ga0.7As single-quantum well with L-w=6.3 nm on a (111)B facet. Full width at half maximum of a photoluminescence peak (lambda=792 nm) from the tilted T-QWRs was as small as 8.7 meV at 28 K, which is comparable with those (6 meV,(5) 10 meV(10)) of conventional GaAs/Al0.3Ga0.7As T-QWRs (6.8 nm/5.8 nm, 7 nm/7 nm) fabricated by the cleaved-edge overgrowth.