We report on the realization of via holes on InP material (for the first time to our knowledge) using bromine/methanol wet chemical etching. Typical dimension of the via holes is about 80 mu m in diameter. A specific layout has been accomplished to obtain the via hole equivalent circuit. Measurements have been performed from 50 MHz to 30 GHz. They exhibit losses of 0.1 dB at 30 GHz. The via hole equivalent circuit is found to be a resistance and an inductance in serial configuration with typical values of 0.4 Omega and 26 pH, respectively.