Scanning tunneling microscopy was used to study the interaction of C-60 with the silicon rich (3 x 3) and carbon rich (root 3 x root 3) surfaces of 6H-SiC(0001). For both reconstructions, triangular or hexagonal islands commensurate with the substrate structure were observed at submonolayer coverages. The C-60 exhibits island growth on these surfaces, with the second layer nucleating on the C-60 islands before completion of the first layer. For coverages greater than one monoloyer, a closed-packed face-centered-cubic (111) structure was formed on the (3 x 3) surface. On the (root 3 x root 3) surface, a disordered layer was observed. A SIC film was also grown using C-60 as the carbon source.