Raman spectra of strained (001)-oriented Si/Ge and alpha-Sn/Ge superlattices with alloyed interfaces are calculated by a bond-polarizability model with lattice dynamical properties described by using a Keating model. The alloyed interface layers are treated by using a supercell technique. It is found that the Raman peaks around 410 cm(-1) of Si/Ge superlattices and 260 cm(-1) of alpha-Sn-Ge superlattices could be used as a measure of interface alloying.