Journal of Vacuum Science & Technology B, Vol.15, No.1, 122-126, 1997
Development of a Wafer Level Technique for Monitoring and Control of Deposition Temperature in High-Vacuum Physical Vapor-Deposition Technology
Deposition temperatures in the range of 500 degrees C are required for aluminum via fill planarization processes. The control of the deposition temperature is a critical factor in achieving consistent via fill planarization. A wafer level technique was developed and proven to be consistent through the operating temperature range to highlight any deviation in the deposition temperature.