Development-free vapor photolithography (DFVP) is a unique all-dry pattern transfer technique, which is based on the reaction of SiO2 with HF vapor under a polymer film in the presence of accelerators at a temperature above 100 degrees C. This article investigates the function of fluorine anions in DFVP. We found that the etching rate was affected not only by the concentration of fluorine anions formed with the help of accelerators, but also by the activity of fluorine anions. Based on this proposal, a novel and more effective accelerator was found. Now, it has been successfully applied to the power electronic device manufacture.