From a standpoint of physical, chemical, and electrical properties, silicon nitride films formed by synchrotron radiation-excited chemical vapor deposition with SiH4+N-2 gas mixture are characterized. These properties are compared with the properties of films deposited by other low-temperature processes. It is found that the present film has such features as lower hydrogen content (<4x10(21) cm(-3)), higher film density (2.9-3.05 g/cm(3)), lower etching rate against BHF (<10 nm/min), and potentially improved electrical properties considering that deposition was performed at substrate temperatures as low as 200 degrees C. Deposition kinetics, the effect of bias on film properties, and ways to improve the electrical properties are also discussed.