A boron-accumulated Si(100) surface with boron coverage up to 0.1 monolayer has been prepared by high-temperature annealing of B-doped Si samples. Scanning tunneling microscopy has been used to monitor the transformation in surface morphology and surface atomic structure induced by boron surface accumulation. The specific boron-induced surface features have been elucidated and a model of their atomic structure has been proposed. On the boron-accumulated surface epitaxial Si films with a thickness of 0.1-3.0 monolayers have been grown using solid phase epitaxy and molecular beam epitaxy. The results show that under appropriate growth conditions B surface segregation can be suppressed even on the atomic scale. The effect of boron induced features on the growth process has been discussed.