화학공학소재연구정보센터
Journal of Vacuum Science & Technology B, Vol.14, No.4, 2524-2530, 1996
Deep-Etch Silicon Millimeter Wave-Guide Structure for Electron Acceleration
An ultrahigh vacuum compatible planar corrugated millimeter mm-waveguide structure (410-mu m-deep) possessing bi-fold symmetry and a precision beam aperture (800 mu m) has been fabricated using silicon processing technology, modeled with numerical analysis software, geometrically characterized, and compared to a similar waveguide fabricated using deep x-ray lithography (DXL) techniques. The waveguide was fabricated to operate at 60 GHz (lambda=5 mm) with fields suitable for 2 pi/3 phase advance operation. Multichip alignment technology was used to provide a semiclosed conducting surface with aperture-coupled periodic resonator cavities. A pair of Si/Pyrex composite metallized substrates patterned with corrugated geometries have been vertically stacked with 980-mu m-diam Pyrex capillaries. Geometrical analysis of the muffin-tin waveguide was divided into two classifications : substrate feature error and die-to-die orientation error. Both types of error were characterized with the following results : feature accuracy was maintained to 0.1%-1.0% tolerances in all directions (5 mu m or less in most cases) and die-to-die aperture distance agreed to within similar to 3% of theoretical calculation. Methods of improving these geometrical tolerances are suggested and critical issues are addressed. Electromagnetic testing of the mm waveguide has been investigated and a bead was fabricated for use in a bead-pull perturbation measurement of acceleration properties. The concluding section compares deep-etch silicon and DXL approaches for the fabrication of the "micro-linac." It is concluded that through further refinement of thermal and conductive properties that the silicon waveguide is a viable method of constructing a micro-linac mn waveguide, requiring less fabrication complexity, processing time, and capital equipment investment than DXL.