Pyrometric interferometry (PI) is becoming a widely used method of obtaining in situ growth rates of GaAs and AlAs epitaxial layers grown by molecular beam epitaxy, due to its use of the ubiquitous narrow-band pyrometer and its ability to measure growth rates on rotating substrates. However, the extension of this technique to AlxGa1-xAs has been hindered by the lack of a convenient, detailed oscillation period calibration curve for the technologically important aluminum composition range 0.0

Keywords:MOLECULAR-BEAM EPITAXY;DEPENDENCE