Using Ar ion beam precleaned surface : followed by in situ ion beam sputter deposition of the transition layer and the metal substrate layer sequentially, a double ion beam deposition method was realized. By using the double ion beam deposition method, a metallized substrate with excellent adherence, smooth as a mirror, and able to resist heat, must be grown successfully on the side of a double-polished tungsten ultralong field emitter array (W-UFEA) matrix surface. The substrate film offers not only W-UFEA for fabricating the leads, but also offers the possibility to form a patternable substrate, as well as fabrication of a low capacitive gate electrode for the field emitter array. This article introduces the fabrication and analysis of the metal substrate film, as well as two structure schemes to realize a low capacitive gated held emitter array.