Field emission of electrons from polycrystalline silicon micropoint emitters has been investigated. Two process routes, wet and dry etching, were used to form emitters, and their morphologies were compared using a transmission electron microscope (TEM). TEM micrographs of the wet-etched polysilicon structures show the presence of many individual grains at the tip. Arrays were easily manufactured, using the wet-etch process, to form sharp conical micropoints. However, the dry-etch process did not allow the formation of sharp tips. Field emission current-voltage data was collected from the wet-etched polycrystalline emitters immediately after etching and showed their emission characteristics to be similar to single crystal silicon emitters. Oxidation sharpening had little effect on the field emission characteristics.