Boron depth profiles in low-energy BF2+-implanted silicon were measured using laser-ionization sputtered neutral mass spectrometry and secondary-ion mass spectrometry. The laser-ionization sputtered neutral mass spectrometry measurements provided more accurate boron profiles in the ultrashallow regions (below 20 nm) than the secondary-ion mass spectrometry measurements. A pileup of boron atoms in the region below 5 nm after annealing was revealed by laser-ionization sputtered neutral mass spectrometry.