Dielectric etch accounts for more than half of all the dry etches used in integrated circuit (IC) fabrication. and plays a very important role in fulfilling strict requirements of volume-manufacturing of IC circuits whose feature size is progressively decreasing. The challenge of meeting volume manufacture requirements is what MxP+ has achieved through a series of hardware and process innovations. By Pareto analysis of the wet clean time of the MxP chamber, we were able to define six major drivers to address three key issues : (1) reduce wet clean time, (2) eliminate system complexity, and (3) achieve technical excellence. Key components of the MxP+ that allow us to address them include a quartz gas distribution plate which prevents the aluminum particle formation, and the electrostatic chuck which eliminates the mechanical clamp system while reducing the particle contamination and wafer edge exclusion. The unique chamber liners of the MxP+ not only shield chamber walls, but also provided a wide process window. Process characterizations have been done for contact, via, nitride, mask open and self-aligned contact etches, and results show that the etcher is capable of etching dielectric films of 0.35 mu m features of either high or low aspect ratios. Extended runs proved the process window of the chamber was very wide, the stability and the uniformity of the process were superior, and particle addition was very low. The etch rates of BPSG and TEOS are about 7500 and 4700 Angstrom/m, respectively, when running at 1000 W; on MxP+. which is about 30% to 40% higher than that of Mx P. Also, through hardware and process innovations, no periodic dry cleans are needed for the MxP+ to maintain excellent particle performance, Furthermore, the cost-of-consumables is dramatically; reduced and the new design of process kits extends its lifetime by a factor of 2 for a much reduced cost.