Journal of Vacuum Science & Technology B, Vol.14, No.2, 707-709, 1996
Enhanced Dry-Etching of Silicon with Deuterium Plasma
The etching of Si and SiO2 for H-2 and D-2 plasma exposure has been investigated. The Si is etched rapidly by a factor of 34 for D-2 plasma exposure compared with H-2 plasma exposure. On the other hand, the etching rate of SiO2 does not change. This suggests a possibility of dry etching of Si with D-2 gas.