This work is a study of depth-dependent changes in surface electrical potential observed during secondary ion mass spectroscopy (SIMS) sputter profiling of doped, recrystallized silicon semiconductor samples. These changes are measured indirectly, using spectrometer energy filtration to detect changes in secondary ion energy as changes in signal transmission. The effect is caused by carrier-depleted zones in samples containing n-p junctions, which become reverse-biased diodes due to the ion bombardment-induced surface charge. These profiles are qualitatively similar to spreading resistance probe (SRP) profiles and are indicative of the dynamic carrier profile as erosion removes the overlying doped silicon, as in the concept of an on-bevel SRP carrier profile. However, the amount of biasing surface charge is highly dependent on bombardment and instrumental conditions, so the same sample can be made to exhibit much different potential profiles. By optimizing these conditions, the signals can give useful information about the sample carrier profile at the same time that the SIMS dopant profile is directly measured.