This paper describes the fabrication process and the reliable characteristics of a metal-insulator-metal capacitor using electron cyclotron resonance plasma-SiO2 as an insulator film. The metal-insulator-metal capacitors are additionally fabricated during the Al multilevel interconnection process since the deposition temperature of electron cyclotron resonance plasma-SiO2 is below 200 degrees C. Also, the leakage current characteristics of the him are excellent even without densification at high temperature. The experimental results confirm that a metal-insulator-metal capacitor fabrication process using electron cyclotron resonance plasma-SiO2 can be applied to analog large scale integration implementation.