Structural and Electronic Effects of Argon Sputtering and Reactive Ion Etching on In0.53Ga0.47As and In0.52Al0.48As Studied by Inelastic Light-Scattering

Maslar JE; Dorsten JF; Bohn PW; Agarwala S; Adesida I; Caneau C; Bhat R

Journal of Vacuum Science & Technology B, Vol.13, No.3, 988-994, 1995

Maslar JE, Dorsten JF, Bohn PW, Agarwala S, Adesida I, Caneau C, Bhat R

Keywords:RESONANT RAMAN-SCATTERING;LO PHONONS;IMPLANTED GAAS;DAMAGE;SPECTROSCOPY;INXGA1-XAS;SPECTRA;MODES;INP;GAP