Previous Article Next Article Table of Contents Journal of Vacuum Science & Technology B, Vol.13, No.2, 796-799, 1995 DOI10.1116/1.587891 Export Citation Growth and Characterization of GaN on Sapphire (0001) Using Plasma-Assisted Ionized Source Beam Epitaxy Kim K, Yoo MC, Shim KH, Verdeyen JT Keywords:GAAS Please enable JavaScript to view the comments powered by Disqus.
