Previous Article Next Article Table of Contents Journal of Vacuum Science & Technology B, Vol.13, No.2, 789-791, 1995 DOI10.1116/1.587889 Export Citation Approach to Obtain High-Quality GaN on Si and SiC-on-Silicon-on-Insulator Compliant Substrate by Molecular-Beam Epitaxy Yang Z, Guarin F, Tao IW, Wang WI, Iyer SS Please enable JavaScript to view the comments powered by Disqus.
