Previous Article Next Article Table of Contents Journal of Vacuum Science & Technology B, Vol.13, No.2, 733-735, 1995 DOI10.1116/1.588149 Export Citation Solid Source Molecular-Beam Epitaxial-Growth of Ga0.5In0.5P Using a Valved, 3-Zone Phosphorus Source Hoke WE, Weir DG, Lemonias PJ, Hendriks HT, Jackson GS, Colombo P Keywords:CHEMICAL VAPOR-DEPOSITION;GAAS;INGAP Please enable JavaScript to view the comments powered by Disqus.
