Previous Article Next Article Table of Contents Journal of Vacuum Science & Technology B, Vol.13, No.2, 667-669, 1995 DOI10.1116/1.587937 Export Citation Carbon-Doped InAlAs/InGaAs Heterojunction Bipolar-Transistors in Solid-Source Molecular-Beam Epitaxy Using Carbon Tetrabromide Hwang WY, Miller DL Keywords:GAAS;BASE Please enable JavaScript to view the comments powered by Disqus.
