Journal of Vacuum Science & Technology B, Vol.13, No.1, 92-104, 1995
Scaling of Si and GaAs Trench Etch Rates with Aspect Ratio, Feature Width, and Substrate-Temperature
Keywords:CYCLOTRON-RESONANCE PLASMA;MOLECULAR CHLORINE;ION-BEAM;GALLIUM-ARSENIDE;LOW-PRESSURE;SILICON;SURFACE;CL2;KINETICS;FIELD