Journal of Vacuum Science & Technology B, Vol.13, No.1, 88-91, 1995
Monolayer Resolved Monitoring of AlAs Growth with Metalorganic Molecular-Beam Epitaxy by Reflectance Anisotropy Spectroscopy
Keywords:CHEMICAL VAPOR-DEPOSITION;001 GAAS;PHASE EPITAXY;SURFACES;SEMICONDUCTORS;OSCILLATIONS;VACUUM;INAS