Journal of Vacuum Science & Technology B, Vol.12, No.6, 3112-3117, 1994
Continuous Ultra-Dry Process for Enhancing the Reliability of Ultrathin Silicon-Oxide Films in Metal-Oxide Semiconductors
Keywords:DEPENDENT DIELECTRIC-BREAKDOWN;SI-SIO2 INTERFACE;ATOMIC-STRUCTURE;THIN SIO2-FILMS;TRAP GENERATION;HOLE-EMISSION;ELECTRON;STATES;SIO2;DEGRADATION