Previous Article Next Article Table of Contents Journal of Vacuum Science & Technology B, Vol.12, No.6, 3084-3089, 1994 DOI10.1116/1.587564 Export Citation Nearly Ideal Characteristics of GaAs Metal-Insulator-Semiconductor Diodes by Atomic Layer Passivation Wada Y, Wada K Keywords:ELECTRICAL-PROPERTIES;INTERFACES;MODEL;SURFACES;SI;CAPACITORS;BARRIER;GAP Please enable JavaScript to view the comments powered by Disqus.
