The first observation of lattice images of stabilized alpha-Sn grown at 150-degrees-C by high-resolution transmission electron microscopy is reported here. A structure of CdTe/alpha-Sn/InSb has been grown on an InSb buffer layer, which was grown on an InSb(100) substrate by molecular beam epitaxy at 220-degrees-C. During the growth, cross doping was carefully avoided. In addition, by the energy-dispersive x-ray spectroscopy, it was found that the interdiffusion of In and Te, which usually occurs across the interface of CdTe/InSb, is prevented by the alpha-Sn layer inserted at the interface.