Very low resistivity, nonalloyed ohmic contacts to p-GaAs are realized by in situ molecular beam epitaxy (MBE). Heavily Be-doped GaAs either in a uniform doping or with a delta-doping scheme was grown using MBE. Three different metals of Au, Ag, and Nb were in situ deposited on p-GaAs, yielding contact resistance R(C) less than (1-4) x 10(-7) OMEGA cm2.