Using plasma immersion ion implantation (PIII), silicon has been doped with boron in a high voltage pulsed microwave multipolar bucket plasma system. In order to optimize the system design and predict the doping results, a collisional dynamic sheath model has been developed, which has been verified by measurements as well as simulations. Silicon devices, including diode, metaloxide-semiconductor (MOS) capacitor, and PMOS transistor, were fabricated by PIII doping technique. B2H6 diluted in helium (1%) was used as the gas source. The reasonable contamination levels involved from PIII process were observed by the measurements of secondary ion mass spectrometry and characteristics of fabricated devices. Good quality of devices has been demonstrated including low reverse current of diode and reasonable lifetimes of the minority carrier.