화학공학소재연구정보센터
Journal of Vacuum Science & Technology B, Vol.12, No.2, 884-888, 1994
Application of Particle-in-Cell Simulation to Plasma Source Ion-Implantation
The powerful numerical technique of particle-in-cell simulation has been used to study sheath formation and dynamics of plasma source ion implantation (PSII). Two-dimensional cylindrical calculations permit us to study the process when sheath dimensions are large compared to feature scales of the implanted object, where conformality is not assured. Plasma chambers as large as the PSII system at Los Alamos have been modeled. DensitieS of 10(14-15) M-3 are initialized in the numerical configuration. Voltages of -50 to -100 kV have been modeled, with rise times on this pulse of 0.1-1.0 mus. Calculations of the ambient electron/N2+ ion plasma are presented. The implantation flux and dose on a variety of different shapes, including long cylinders and bores in flat plates, have been investigated. Finally, magnetic fields have been added to the calculations. The effect of this field on the process is measured with and without the effect of secondary electron emission from the surface.