It was found that epitaxial Si films could be deposited on Si substrates by using a sputtering-type electron cyclotron resonance plasma that had a conventional base pressure of 5 X 10(-7) Torr. The effects of discharge conditions and substrate temperature were studied systematically in order to understand the necessary conditions for epitaxial growth. It was found that discharge gas pressure, target power for sputtering, and substrate temperature play crucial roles in the epitaxial deposition. The implications of the changes of the three parameters are discussed in detail.