A theoretical study of the scalability of the SiGe channel pmetal-oxide-semiconductor field effect transistor to the 0.1 mu m generation is presented. Devices with n + polysilicon gates, p + polysilicon gates, and intermediate workfunction p + Sice gates were considered. It was found that short channel effects became severe in the n + gated device for channel lengths below 0.15 mu m. The p + gated device provided excellent short channel behavior, but suffered from a very poor crossover voltage. The best compromise between short channel effects and crossover voltage was obtained with the p + SiGe gate, which gave -V-CROSS close to V-DD and V-DIBL approximate to 98mV in the 0.1 mu m generation.