This work describes a technique fur halting the optical breakdown process in reverse biased p-i-n structures under high optical stress before significant damage to the material can occur. The devices investigated are waveguide based InGaAsP/InP multiquantum well structures used;Is optical attenuators or modulators. Analysis of the devices using focused ion beam milling and scanning electron microscopy can identify the point within the device where the optical breakdown is initiated. and demonstrates that optical damage is greatly limited by this technique. The degree of damage is controlled, and is correlated to the increase in dark current measured in the device. The technique can allow for a clear understanding of how the breakdown process begins, as well as its dependence on device design. In addition, comparisons between the site where breakdown is initiated and the predicted site calculated from a finite element thermal model of the device are made.