High quality epitaxial films of MgO have been grown on a Si (100) surface with TiN as a buffer layer by pulsed laser deposition. The electron diffraction patterns of these films confirmed the single crystal nature of the films with cube-on-cube epitaxy. It is difficult to grow high quality MgO films directly on Si due to large differences in lattice constants and thermal expansion coefficients of the two materials. The high resolution microscopy on our films revealed sharp interfaces between MgO/TiN and TiN/Si with no indication of interfacial reaction. Raman spectrum of MgO films revealed sharp peaks characteristic of MgO and TiN, indicating a good crystallinity. Further, superconducting YBa2Cu3O7-x films were grown on this heterostructure with a sharp transition at 88 K, indicating a high quality of the grown structure. This work opens a way for the growth of a a variety of high quality perovskite structures for integration with silicon devices.