Dissolution Characteristics of Copper Oxide in Gas-liquid Hybrid Atmospheric Pressure Plasma Reactor Using Organic Acid Solution

Heoung Su Kwon; Won Gyu Lee

Applied Chemistry for Engineering, Vol.33, No.2, 229-233, April, 2022

DOI10.14478/ace.2022.1009 Export Citation

Dissolution Characteristics of Copper Oxide in Gas-liquid Hybrid Atmospheric Pressure Plasma Reactor Using Organic Acid Solution

Heoung Su Kwon, and Won Gyu Lee^†

Division of Chemical Engineering and Bioengineering, Kangwon National University, Chuncheon 24341, Korea

E-mail:

In this study, a gas-liquid hybrid atmospheric pressure plasma reactor of the dielectric barrier discharge method was fabricated and characterized. The solubility of copper oxide in the organic acid solution was increased when argon having a larger atomic weight than helium was used during plasma discharge. There was no significant effect of mixing organic acid solutions under plasma discharge treatment on the variation of copper oxide’s solubility. As the applied voltage for plasma discharge and the concentration of the organic acid solution increased, the dissolution and removal power of the copper oxide layer increased. Solubility of copper oxide was more affected by the concentration in organic acid solution rather than the variation of plasma applied voltage. The usefulness of hybrid plasma reactor for the surface cleaning process was confirmed.

Keywords:Gas-liquid hybrid;Plasma reactor;Cleaning process;Copper oxide;Organic acid solution;Solubility

[References]

Andricacos PC, Uzoh C, Dukovic JO, Horkans J, Deligianni H, IBM J. Res. Dev., 42, 567 (1998)
Tan YS, Thin Solid Films, 462-463, 250 (2004)
Wang Y, Graham SW, Chan L, Loong S, J. Electrochem. Soc., 144, 1522 (1997)
Engelhardt M, Schindler G, Steinhogel W, Steinlesberger G, Microelectron. Eng., 64, 3 (2002)
Lee SW, Kim JJ, Korean Chem. Eng. Res., 53, 517 (2015)
Ko CK, Lee WG, Korean Chem. Eng. Res., 59, 632 (2021)
Ko CK, Lee WG, Korean Chem. Eng. Res., 54, 548 (2016)
Yamabe C, Takeshita F, Miichi T, Hayashi N, Ihara S, Plasma Process. Polym., 2, 246 (2005)
Bruggeman P, Leys C, J. Phys. D-Appl. Phys., 42, 053001 (2009)
Chavez KL, Hess DW, J. Electrochem. Soc., 148, G40 (2001)
Mugwang FK, Karimi APK, Njoroge WK, Omayio O, Int. J. Thin Film. Sci. Technol., 2, 15 (2013)
Venkataraman N, Muthukumaran A, Raghavan S, Evaluation of Copper oxide to copper selectivity of chemical systems for BEOL cleaning through electrochemical investigations, Mater. Res. Soc. Symp. Proc., April 9-13, San Francisco, USA (2007).
Baga AN, Johnson GRA, Nazhat NB, Saadalla-Mazhat RA, Anal. Chim. Acta, 204, 349 (1988)
Macdougall J, Reid C, McGhee L, Solid State Phenom., 134, 329 (2008)
Ko CK, Lee WG, Surf. Interface Anal., 42, 1128 (2010)

[1] Andricacos PC, Uzoh C, Dukovic JO, Horkans J, Deligianni H, IBM J. Res. Dev., 42, 567 (1998)

[2] Tan YS, Thin Solid Films, 462-463, 250 (2004)

[3] Wang Y, Graham SW, Chan L, Loong S, J. Electrochem. Soc., 144, 1522 (1997)

[4] Engelhardt M, Schindler G, Steinhogel W, Steinlesberger G, Microelectron. Eng., 64, 3 (2002)

[5] Lee SW, Kim JJ, Korean Chem. Eng. Res., 53, 517 (2015)

[6] Ko CK, Lee WG, Korean Chem. Eng. Res., 59, 632 (2021)

[7] Ko CK, Lee WG, Korean Chem. Eng. Res., 54, 548 (2016)

[8] Yamabe C, Takeshita F, Miichi T, Hayashi N, Ihara S, Plasma Process. Polym., 2, 246 (2005)

[9] Bruggeman P, Leys C, J. Phys. D-Appl. Phys., 42, 053001 (2009)

[10] Chavez KL, Hess DW, J. Electrochem. Soc., 148, G40 (2001)

[11] Mugwang FK, Karimi APK, Njoroge WK, Omayio O, Int. J. Thin Film. Sci. Technol., 2, 15 (2013)

[12] Venkataraman N, Muthukumaran A, Raghavan S, Evaluation of Copper oxide to copper selectivity of chemical systems for BEOL cleaning through electrochemical investigations, Mater. Res. Soc. Symp. Proc., April 9-13, San Francisco, USA (2007).

[13] Baga AN, Johnson GRA, Nazhat NB, Saadalla-Mazhat RA, Anal. Chim. Acta, 204, 349 (1988)

[14] Macdougall J, Reid C, McGhee L, Solid State Phenom., 134, 329 (2008)

[15] Ko CK, Lee WG, Surf. Interface Anal., 42, 1128 (2010)